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MITSUBISHI SEMICONDUCTOR THYRISTOR
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR12AM
OUTLINE DRAWING
10.5 MAX
3.20.2
Dimensions in mm
4.5 4
1.3
16 MAX
12.5 MIN 3.8 MAX
TYPE NAME VOLTAGE CLASS
1.0
0.8
2.5
7.0
3.60.2
2.5
4.5
0.5
2.6
123 24 1 2 3 4
Measurement point of case temperature
* IT (AV) ......................................................................... 12A * VDRM ..............................................................400V/600V * IGT ..........................................................................30mA APPLICATION Switching mode power supply, ECR, motor control
3 1
CATHODE ANODE GATE ANODE
TO-220
MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state Voltage class 8 400 500 320 400 320 12 600 720 480 600 480 Unit V V V V V
Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg --
Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing
Conditions Commercial frequency, sine half wave, 180 conduction, Tc=91C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings 18.8 12.0 360 544 5 0.5 6 10 2 -40 ~ +125 -40 ~ +125
Unit A A A A2s W W V V A C C g
Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value
2.0
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-c) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Test conditions Tj=125C, VRRM applied Tj=125C, VDRM applied Tc=25C, ITM=40A, Tj=25C, VD=6V, IT=1A Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, IT=1A Tj=25C, VD=12V Junction to case V1 Limits Min. -- -- -- -- 0.2 -- -- -- Typ. -- -- -- -- -- -- 15 -- Max. 2.0 2.0 1.6 1.5 -- 30 -- 1.2 Unit mA mA V V V mA mA C/W
V1. The contact thermal resistance Rth (c-f) is 1.0C/W with greased.
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS 103 7 Tc = 25C 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 400
SURGE ON-STATE CURRENT (A)
360 320 280 240 200 160 120 80 40 0 100 2 3 4 5 7 101 2 3 4 5 7 102
ON-STATE CURRENT (A)
CONDUCTION TIME (CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE CHARACTERISTICS
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE
100 (%) GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C)
3 2
GATE VOLTAGE (V)
101 7 5 3 2 100 7 5 3 2
VFGM = 6V
PGM = 5W PG(AV) = 0.5W
103 7 TYPICAL EXAMPLE 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
VGT = 1.5V IGT = 30mA
IFGM = 2A
10-1 VGD = 0.2V 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE
MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (C/W)
1.6
GATE TRIGGER VOLTAGE (V)
1.4 1.2 1.0
0.8 0.6 0.4
0.2
,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,,
DISTRIBUTION TYPICAL EXAMPLE 0 -40 -20 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (C)
101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 10-2 10-4 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 TIME (s)
AVERAGE POWER DISSIPATION (W)
MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 64
360 180 120 RESISTIVE, 90 40 INDUCTIVE 60 LOADS 32 48 24 16 8 0 0 4 8 12 16 20 24 28 32 = 30
CASE TEMPERATURE (C)
56
ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 RESISTIVE, INDUCTIVE 140 LOADS 360 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 = 30 60 90 180 120
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
140 120 100 80 60 40 20 0 0 = 30 60 90 180
AVERAGE POWER DISSIPATION (W)
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 AMBIENT TEMPERATURE (C) 360 RESISTIVE, 120 INDUCTIVE LOADS NATURAL CONVECTION
MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 64 56 48 40 32 24 16 8 0 0 4 8 12 = 30 60 180 120 90
360 RESISTIVE LOADS 16 20 24 28 32
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 CASE TEMPERATURE (C) 140 120 100 80 60 40 20 0 0 4 8 12 16 20 24 28 32 = 30 90 60 120 180 AMBIENT TEMPERATURE (C)
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 140 120 100 80 60 40 20 0 0 = 30 60 90 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 180
360 RESISTIVE LOADS
360 RESISTIVE 120 LOADS NATURAL CONVECTION
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AVERAGE POWER DISSIPATION (W)
MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 64 CASE TEMPERATURE (C) 56 48 40 32 24 16 8 0 0 4 8 12 16 20 24 28 32 360 RESISTIVE, INDUCTIVE LOADS = 30
ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 140 120 100 80 60 40 20 0 0 4 8 12 16 20 24 28 32 = 30 90 180 60 120 270 360 RESISTIVE, INDUCTIVE LOADS
180 270 120 DC 90 60
DC
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
AMBIENT TEMPERATURE (C)
BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C)
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 RESISTIVE, INDUCTIVE 140 LOADS NATURAL 120 360 CONVECTION 100 80 60 40 20 0 0 = 30 60 90 120 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 DC 270 180
BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE
100 (%)
200 180 160 140 120 100 80 60 40 20
TYPICAL EXAMPLE
0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE (dv/dt = vV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )
HOLDING CURRENT (mA)
BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 Tj = 125C TYPICAL 140 EXAMPLE 120 IGT (25C) # 10.1mA 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) #
100 (%)
HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 #2 #1 TYPICAL EXAMPLE IGT (25C) # 1 10.6mA # 2 11.6mA
100 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
TURN-ON TIME VS. GATE CURRENT 10.0 9.0 Ta = 25C VD = 100V RL = 12 TYPICAL EXAMPLE IGT (25C) # 11.2mA
TURN-ON TIME (s)
8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 #
REPETITIVE PEAK REVERSE VOLTAGE (Tj=tC) REPETITIVE PEAK REVERSE VOLTAGE (Tj=25C)
REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 200 TYPICAL EXAMPLE 180 160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
0 10 20 30 40 50 60 70 80 90 100 GATE CURRENT (mA)
100 (%)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 TYPICAL EXAMPLE 5 3 2 103 7 5 3 2
100 (%)
tw
0.1s
GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)
102 7 5 3 2 101 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT PULSE WIDTH (s)
Feb.1999

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